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P0910A fiches techniques PDF

UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0910A
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0910A fiche technique
P0910AS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
9.5mΩ @VGS = 10V
ID
80A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
80
50
250
Avalanche Current
IAS 72
Avalanche Energy
L = 0.3mH
EAS
797
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
125
50
Operating Junction & Storage Temperature Range
Lead Temperature(1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1
62.5
UNITS
°C / W
Ver 1.0
1 2013/8/8

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