DataSheetWiki


P2804ND5G fiches techniques PDF

UNIKC - P&N-Channel Enhancement Mode MOSFET

Numéro de référence P2804ND5G
Description P&N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





1 Page

No Preview Available !





P2804ND5G fiche technique
P2804ND5G
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
40V
RDS(ON)
28mΩ @VGS =10V
-40V
48mΩ @VGS = -10V
ID
21A
-16A
Channel
N
P
TO-252-5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40
VDS P -40
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
N 21
TC = 25 °C
P -16
ID N 13
TC = 100°C
P -10
Pulsed Drain Current1
N 50
IDM P -50
Avalanche Current
N 26
IAS P -26
Avalanche Energy
L = 0.1mH
N 33
EAS P 33
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
N
21
P
N
8
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014-5-8

PagesPages 8
Télécharger [ P2804ND5G ]


Fiche technique recommandé

No Description détaillée Fabricant
P2804ND5G P&N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
NIKO-SEM

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche