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Numéro de référence | PD632BA | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PD632BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.7mΩ @VGS = 10V
ID
105A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
105
66
200
Avalanche Current
IAS 40
Avalanche Energy
L=0.1mH
EAS
80
Power Dissipation
TC= 25 °C
TC= 100°C
PD
73
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 55A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.1
1 2015/11/19
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Pages | Pages 8 | ||
Télécharger | [ PD632BA ] |
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