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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PD612BA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PD612BA fiche technique
PD612BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
47A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
47
30
120
Avalanche Current
IAS 22
Avalanche Energy
L=0.1mH
EAS
24
Power Dissipation
TC= 25 °C
TC= 100°C
PD
34
13
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
3.6
UNITS
°C / W
REV 1.0
1 2014/5/16

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