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Numéro de référence | UTC2SC1384 | ||
Description | NPN EPITAXIAL PLANAR TRANSISTOR | ||
Fabricant | Unisonic Technologies | ||
Logo | |||
UTC2SC1384 NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
*Low collector to emitter saturation voltage VCE(sat)
*Complementary pair with 2SA684
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Peak Collector Current
Icp 1.5
Collector Current (DC)
Ic 1
Collector Dissipation (Ta=25°C)
Pc
1
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB=20V,IE=0
Collector-Base Voltage
VCBO
Ic=10µA,IE=0
60
Collector-Emitter Voltage
VCEO
Ic=2mA,IB=0
50
Emitter-Base Voltage
VEBO
IE=10µA,Ic=0
5
DC Current Gain
hFE1
VCE=10V, Ic=500mA (note) 85
hFE2
VCE=5V, IB=1A (note)
50
Collector-Emitter Saturation Voltage VCE(sat)
Ic=0.5A, IB=50mA (note)
Base-Emitter Saturation Voltage
VBE(sat)
Ic=0.5A, IB=50mA (note)
Current Gain Bandwidth Product
fT VCE=10V, IB=-50mA, f=200MHz
Output Capacitance
Cob VCB=10V,IE=0,f=1MHz
Note: Pulse measurement
TYP
160
100
0.2
0.85
200
11
MAX
0.1
340
UNIT
µA
V
V
V
0.4 V
1.2 V
MHz
20 pF
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R211-005,A
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Pages | Pages 3 | ||
Télécharger | [ UTC2SC1384 ] |
No | Description détaillée | Fabricant |
UTC2SC1384 | NPN EPITAXIAL PLANAR TRANSISTOR | Unisonic Technologies |
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