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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PD510BA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PD510BA fiche technique
PD510BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.3mΩ @VGS = 10V
ID
92A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
92
58
180
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
74.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 40A.
MAXIMUM
2
62.5
UNITS
°C / W
REV 1.0
1 2013-12-24

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