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Numéro de référence | PD504BA | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PD504BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
85mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 110
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9
35
Avalanche Current
IAS 11
Avalanche Energy
L = 1mH
EAS
60
Peak Diode Recovery dV/dt2
dV/dt
4.1
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
46
18
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25℃
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.7
50
UNITS
°C / W
Ver 1.0
1 2013-5-29
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Pages | Pages 5 | ||
Télécharger | [ PD504BA ] |
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