(PDF) P2003ED Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P2003ED
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -36 -23 -100 Avalanche Current Avalanche Energy2 L = 0.1 mH IAS EAS -32 51 Power Dissipation TC = 25 °C TC = 100 °C PD 42 17 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -15V , Starting TJ = 25 °C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 62.5 UNITS °C / W Ver 1.1 1 2013-3-21 1 page P2003ED P-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-21 5 Page

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PDF P2003ED Data sheet ( Hoja de datos )