|
|
Numéro de référence | P2504BDG | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P2504BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 25mΩ @VGS = 10V
ID
32A
TO-252
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
32
20
A
70
Avalanche Current
IAS 17
Avalanche Energy
L = 0.3mH
EAS
44 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
41.6
W
16.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-21
|
|||
Pages | Pages 5 | ||
Télécharger | [ P2504BDG ] |
No | Description détaillée | Fabricant |
P2504BDG | N-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |