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What is EM488M1644VTB?

This electronic component, produced by the manufacturer "Eorex", performs the same function as "128Mb Synchronous DRAM".


EM488M1644VTB Datasheet PDF - Eorex

Part Number EM488M1644VTB
Description 128Mb Synchronous DRAM
Manufacturers Eorex 
Logo Eorex Logo 


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eorex
EM488M1644VTB
128Mb (2M×4Bank×16) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V ±0.3V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of
the System Clock
• Auto Refresh and Self Refresh
• 4,096 Refresh Cycles / 64ms (15.6us)
Description
The EM488M1644VTB is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
2Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 128Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages:TSOPII 54P 400mil.
Ordering Information
Part No
EM488M1644VTB-75F
EM488M1644VTB-7F
EM488M1644VTB-6F
Organization
8M X 16
8M X 16
8M X 16
Max. Freq
133MHz @CL3
143MHz @CL3
166MHz @CL3
Package
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
Grade
Commercial
Commercial
Commercial
Pb
Free
Free
Free
* EOREX reserves the right to change products or specification without notice.
Dec. 2006
1/17
www.eorex.com

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EM488M1644VTB equivalent
eorex
EM488M1644VTB
Recommended DC Operating Conditions
(VDD=3.3V±0.3V, TA=0°C ~ 70°C)
Symbol
Parameter
Test Conditions
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
Operating Current (Note 1)
Precharge Standby Current in
Power Down Mode
Precharge Standby Current in
Non-power Down Mode
Active Standby Current in
Power Down Mode
Active Standby Current in
Non-power Down Mode
Operating Current (Burst
Mode) (Note 2)
Refresh Current (Note 3)
Burst length=1,
tRCtRC(min.), IOL=0mA,
One bank active
CKEVIL(max.), tCK=15ns
CKEVIL(max.), tCK=
CKEVIL(min.), tCK=15ns,
/CSVIH(min.)
Input signals are changed
one time during 30ns
CKEVIL(min.), tCK= ,
Input signals are stable
CKEVIL(max.), tCK=15ns
CKEVIL(max.), tCK=
CKEVIL(min.), tCK=15ns,
/CSVIH(min.)
Input signals are changed
one time during 30ns
CKEVIL(min.), tCK= ,
Input signals are stable
tCCD2CLKs, IOL=0mA
tRCtRC(min.)
ICC6 Self Refresh Current
CKE0.2V
*All voltages referenced to VSS.
Note 1: ICC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 2: ICC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 3: Input signals are changed only one time during tCK (min.)
Max.
75
1
1
20
15
7
5
45
35
110
150
2
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IIL Input Leakage Current
0VIVDDQ, VDDQ=VDD
All other pins not under test=0V
-0.5
IOL Output Leakage Current
0VOVDDQ, DOUT is disabled
-0.5
VOH High Level Output Voltage IO=-4mA
2.4
+0.5
+0.5
uA
uA
V
VOL Low Level Output Voltage IO=+4mA
0.4 V
Dec. 2006
5/17
www.eorex.com


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EM488M1644VTB electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
EM488M1644VTBThe function is 128Mb Synchronous DRAM. EorexEorex
EM488M1644VTEThe function is 128Mb Synchronous DRAM. EorexEorex
EM488M1644VTFThe function is 128Mb (2M x 4Bank x 16) Synchronous DRAM. EorexEorex

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