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P0903BD fiches techniques PDF

UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0903BD
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0903BD fiche technique
P0903BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
57A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
57
36
160
Avalanche Current
IAS 34
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C
TC= 100°C
PD
49
19
Junction & Storage Temperature Range
Lead Temperature(1/16” from case for 10 sec)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
63
UNITS
°C / W
REV 1.0 1 2014/5/7

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