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Numéro de référence | P062ABDD | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P062ABDD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 5.8mΩ @VGS = 10V
ID
83A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
83
53
180
Avalanche Current
IAS 40
Avalanche Energy
L=0.1mH
EAS
80
Power Dissipation
TC= 25 °C
TC= 100°C
PD
69
27
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 60A.
SYMBOL
RqJC
TYPICA MAXIMUM UNITS
L 2.55 °C / W
REV 1.0
1 2014/4/29
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Pages | Pages 5 | ||
Télécharger | [ P062ABDD ] |
No | Description détaillée | Fabricant |
P062ABD8 | N-Channel Enhancement Mode MOSFET | UNIKC |
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