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PDF P0603BDL Data sheet ( Hoja de datos )
| Número de pieza | P0603BDL | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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P0603BDL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 6.8mΩ @VGS = 10V
ID
68A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
68
43
160
Avalanche Current
IAS 52
Avalanche Energy
L = 0.3mH
EAS
135
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-14
1 page  
P0603BDL
N-Channel Enhancement Mode MOSFET
Ver 1.1
5 2013-3-14
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P0603BDL.PDF ] | |
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