P0603BDD Datasheet PDF - UNIKC
| Part Number | P0603BDD | |
| Description | N-Channel Enhancement Mode MOSFET | |
| Manufacturers | UNIKC | |
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P0603BDD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID
71A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
71
45
180
Avalanche Current
IAS 41
Avalanche Energy
L=0.1mH
EAS
84
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 60A.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.5 °C / W
REV 1.0 1 2014/5/4
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P0603BDD
N-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。
REV 1.0
5
2014/5/4
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P0603BDD electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P0603BDD.PDF Datasheet ] | |
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