|
|
Numéro de référence | P0120HLB | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P0120HLB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
1.4Ω @VGS = 10V
ID
0.8A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
0.8
0.7
Pulsed Drain Current1
IDM 3.5
Avalanche Current
IAS 2.6
Avalanche Energy
L = 1mH
EAS
3.4
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
53 °C / W
REV 1.0
1 2016/6/15
|
|||
Pages | Pages 8 | ||
Télécharger | [ P0120HLB ] |
No | Description détaillée | Fabricant |
P0120HLB | N-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |