(PDF) P0603BK Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P0603BK
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P0603BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 TC = 25 °C(Package Limited) TC = 25 °C(Silicon Limited) ID 30 80 Pulsed Drain Current1 TC = 100 °C 50 IDM 150 Continuous Drain Current2 TA = 25 °C TA = 70 °C 16 ID 13 Avalanche Current IAS 47 Avalanche Energy L = 0.1mH EAS 112 Power Dissipation TC = 25 °C TC = 100 °C 62.5 PD 25 Power Dissipation TA = 25 °C TA = 70 °C 2.5 PD 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed SYMBOL RqJC RqJA Ver 1.0 1 TYPICAL MAXIMUM 2 50 UNITS °C / W 2012/4/16 1 page P0603BK N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16 5 Page

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PDF P0603BK Data sheet ( Hoja de datos )