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Numéro de référence | PE537BA | ||
Description | P-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PE537BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
8.5mΩ @VGS = -10V
ID
-33A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
TC = 25 °C
-33
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
-22
-12
Pulsed Drain Current1
TA= 70 °C
IDM
-9.6
-100
Avalanche Current
IAS -34
Avalanche Energy
L =0.1mH
EAS
57.8
TC = 25 °C
16.7
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6.7
2
TA = 70 °C
1.3
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
7.5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
UNITS
°C / W
REV 1.0 1 2015/1/7
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Pages | Pages 5 | ||
Télécharger | [ PE537BA ] |
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