DataSheetWiki


PE537BA fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PE537BA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





1 Page

No Preview Available !





PE537BA fiche technique
PE537BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
8.5mΩ @VGS = -10V
ID
-33A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
TC = 25 °C
-33
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
-22
-12
Pulsed Drain Current1
TA= 70 °C
IDM
-9.6
-100
Avalanche Current
IAS -34
Avalanche Energy
L =0.1mH
EAS
57.8
TC = 25 °C
16.7
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6.7
2
TA = 70 °C
1.3
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
7.5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
UNITS
°C / W
REV 1.0 1 2015/1/7

PagesPages 5
Télécharger [ PE537BA ]


Fiche technique recommandé

No Description détaillée Fabricant
PE537BA P-Channel Enhancement Mode MOSFET UNIKC
UNIKC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche