DataSheetWiki


P1203EEA fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P1203EEA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





1 Page

No Preview Available !





P1203EEA fiche technique
P1203EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-40A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-40
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-25
-11
-9
-95
45
Avalanche Energy
L = 0.1mH
EAS
101
TC = 25 °C
31
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
12
2.2
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.2
1 2015/8/14

PagesPages 9
Télécharger [ P1203EEA ]


Fiche technique recommandé

No Description détaillée Fabricant
P1203EEA P-Channel Enhancement Mode MOSFET UNIKC
UNIKC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche