|
|
Numéro de référence | P1203EEA | ||
Description | P-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P1203EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-40A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-40
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-25
-11
-9
-95
45
Avalanche Energy
L = 0.1mH
EAS
101
TC = 25 °C
31
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
12
2.2
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.2
1 2015/8/14
|
|||
Pages | Pages 9 | ||
Télécharger | [ P1203EEA ] |
No | Description détaillée | Fabricant |
P1203EEA | P-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |