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PDF PE642DT Data sheet ( Hoja de datos )
| Número de pieza | PE642DT | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
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PE642DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
Q2 30V
RDS(ON)
9mΩ @VGS = 10V
Q1 30V 10.5mΩ @VGS = 10V
ID
34A
31A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
34 31
22 20
IDM 48 46
Continuous Drain Current3
TA = 25 °C
TA = 70 °C
ID
11 9.7
8.8 7.7
Avalanche Current
IAS 21 18.3
Avalanche Energy
L = 0.1mH
EAS
22 16.7
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
20 19
8 7.6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2 1.7
1.2 1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
RqJA
Q2
Q1
62
70
Junction-to-case
RqJC
RqJC
Q2
Q1
6.2
6.5
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is Q2=14A , Q1=9.5A.
°C / W
REV 1.0 1 2015/6/9
1 page  
PE642DT
Dual N-Channel Enhancement Mode MOSFET
REV 1.0 5 2015/6/9
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PE642DT.PDF ] | |
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