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PD1503YVS-A fiches techniques PDF

UNIKC - Dual N-Channel Enhancement Mode MOSFET

Numéro de référence PD1503YVS-A
Description Dual N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PD1503YVS-A fiche technique
PD1503YVS-A
Dual N- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 15.5mΩ @VGS = 10V
Q1 30V 18mΩ @VGS = 10V
ID
9A
8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2 Q1
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L =0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
30 30
±20 ±20
98
76
35 30
29 21
42 24
2
1.28
-55 to 150
UNITS
V
V
A
mJ
W
°C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Schottky
Reverse Current
VR = 25V
IR
0.05
Forward Voltage
IF = 1A
VF
0.45
UNITS
mA
V
REV 1.0
1 2014-3-10

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