(PDF) P8008BV Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P8008BV
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current1 TA = 25 °C TA = 100 °C ID 3 2 Pulsed Drain Current IDM 15 Avalanche Current IAS 22 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TA= 25 °C TA =100 °C PD 2.5 1 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 50 25 UNITS °C / W REV 1.0 1 2014/12/2 1 page P8008BV N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/12/2 5 Page

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PDF P8008BV Data sheet ( Hoja de datos )