|
|
Numéro de référence | PB555BA | ||
Description | P-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PB555BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
25mΩ @VGS = -10V
ID
-8A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
-8
-6.4
30
Power Dissipation3
TA= 25 °C
TA= 70°C
PD
2.7
1.7
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
45
65
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe,in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.1
1 2015/9/24
|
|||
Pages | Pages 8 | ||
Télécharger | [ PB555BA ] |
No | Description détaillée | Fabricant |
PB555BA | P-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |