(PDF) PB5A3JW Datasheet - Dual P-Channel Enhancement Mode MOSFET

Número de pieza	PB5A3JW
Descripción	Dual P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PB5A3JW Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 65mΩ @VGS = -4.5V ID -3.6A PDFN 2X2S 100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM -3.6 -2.9 14 Power Dissipation TA = 25 °C TA = 70 °C PD 1.4 0.9 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. MAXIMUM 86 UNITS °C / W REV 1.0 1 2016/10/18 1 page PB5A3JW Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/10/18 5 Page

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PDF PB5A3JW Data sheet ( Hoja de datos )