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UNIKC - N&P-Channel Enhancement Mode MOSFET

Numéro de référence P5003QVG
Description N&P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P5003QVG fiche technique
P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
27.5mΩ @VGS = 10V
-30V
45mΩ @VGS = -10V
ID Channel
10A N
-7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
N 10
P -7
ID N 7
P -5
Pulsed Drain Current1
N 20
IDM
P -20
Power Dissipation
TA = 25 °C
TA = 70 °C
N 2.5
P 2.5
PD N 1.6
P 1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Duty cycle1%.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
30
UNITS
°C / W
°C / W
Ver 1.0
1 2013-4-18

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