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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P3503EVG
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P3503EVG fiche technique
P3503EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
35mΩ @VGS = -10V
ID
-8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
ID
IDM
-8
-7
-30
Power Dissipation
TC = 25 °C
TC = 70 °C
PD
2.5
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/10/17

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