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Número de pieza | P1406BV | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P1406BV (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! P1406BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 12.5mΩ @VGS = 10V
ID
12A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
12
10
40
Avalanche Current
IAS 39
Avalanche Energy
L = 0.1mH
EAS
76
Power Dissipation3
TA= 25 °C
TA =70 °C
PD
4
2.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t ≦10s
RqJA
30
Junction-to-Ambient
Steady-State
RqJA
56
Junction-to-Case
Steady-State
RqJC
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.0
1 2017/1/11
1 page P1406BV
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2017/1/11
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet P1406BV.PDF ] |
Número de pieza | Descripción | Fabricantes |
P1406BV | N-Channel Enhancement Mode MOSFET | UNIKC |
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