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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0903BVA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0903BVA fiche technique
P0903BVA
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
13A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
13
10
80
30
Avalanche Energy
L =0.1mH
EAS
45
Power Dissipation
TA= 25 °C
TA =70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.3
1.5
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
55
Junction-to-Case
RqJC
3.7
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design
UNITS
°C / W
REV 1.0
1 2014/9/12

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