(PDF) P0804BVG Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P0804BVG
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P0804BVG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 12mΩ @VGS = 10V ID 12A SOP- 08 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC= 100 °C ID IDM 12 8 50 Power Dissipation TC = 25 °C TC = 100 °C PD 2.5 1 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.5 MAXIMUM 25 50 UNITS °C / W REV 1.1 1 2014-4-25 1 page P0804BVG N-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2014-4-25 5 Page

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PDF P0804BVG Data sheet ( Hoja de datos )