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Numéro de référence | P0603BV | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P0603BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
16A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
16
13
70
Avalanche Current
IAS 48
Avalanche Energy
L = 0.1mH
EAS
113
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/5/16
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Pages | Pages 5 | ||
Télécharger | [ P0603BV ] |
No | Description détaillée | Fabricant |
P0603BD | N-Channel Enhancement Mode MOSFET | UNIKC |
P0603BDB | N-Channel Enhancement Mode MOSFET | UNIKC |
P0603BDD | N-Channel Enhancement Mode MOSFET | UNIKC |
P0603BDF | N-Channel Enhancement Mode MOSFET | UNIKC |
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