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Numéro de référence | P0403BV | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P0403BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID
18A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
18
15
70
Avalanche Current
IAS 42
Avalanche Energy
L = 0.1mH
EAS
87
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
Lead Temperature( 1/16" from case for 10 sec)
TL 275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
Ver 1.0
1 2012/4/16
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Pages | Pages 5 | ||
Télécharger | [ P0403BV ] |
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