(PDF) PA004EM Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PA004EM
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PA004EM P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 100mΩ @VGS = -10V ID -2.7A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2.7 -2.1 -25 Power Dissipation TA = 25 °C TA = 70 °C PD 1.1 0.7 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 110 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014/8/18 1 page PA004EM P-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/8/18 5 Page

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PDF PA004EM Data sheet ( Hoja de datos )