(PDF) P6503FM Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P6503FM
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P6503FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.6 -3 -19 Avalanche Current IAS -19 Avalanche Energy L = 0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 130 °C / W REV 1.1 1 2016/1/22 1 page P6503FM P-Channel Enhancement Mode MOSFET REV 1.1 5 2016/1/22 5 Page

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PDF P6503FM Data sheet ( Hoja de datos )