|
|
Numéro de référence | PB210BC | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PB210BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
240mΩ @VGS = 10V
ID
2.2A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
2.2
1.8
8
Avalanche Current
IAS 6
Avalanche Energy
L = 1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 100 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
10
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2015/5/26
|
|||
Pages | Pages 5 | ||
Télécharger | [ PB210BC ] |
No | Description détaillée | Fabricant |
PB210BC | N-Channel Enhancement Mode MOSFET | UNIKC |
PB210BD | N-Channel Enhancement Mode MOSFET | UNIKC |
PB210BD | N-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
PB210BI | N-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |