DataSheetWiki


P9006EI fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P9006EI
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





1 Page

No Preview Available !





P9006EI fiche technique
P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID
-18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
-18
-11
-50
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
30
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
51
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.45
50
UNITS
°C / W
Ver 1.0
1 2012/4/12

PagesPages 5
Télécharger [ P9006EI ]


Fiche technique recommandé

No Description détaillée Fabricant
P9006EDG P-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P9006EDG P-Channel Logic Level Enhancement Niko-Sem
Niko-Sem
P9006EI P-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P9006EL P-Channel Enhancement Mode MOSFET UNIKC
UNIKC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche