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Numéro de référence | P9006EI | ||
Description | P-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID
-18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
-18
-11
-50
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
30
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
51
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.45
50
UNITS
°C / W
Ver 1.0
1 2012/4/12
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Pages | Pages 5 | ||
Télécharger | [ P9006EI ] |
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