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Numéro de référence | P1825AD | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
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1 Page
P1825AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
200mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
8
72
Avalanche Current
IAS 23
Avalanche Energy
L = 1mH EAS 261
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
69
27
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-25
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Pages | Pages 5 | ||
Télécharger | [ P1825AD ] |
No | Description détaillée | Fabricant |
P1825AD | N-Channel Enhancement Mode MOSFET | UNIKC |
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