|
|
Numéro de référence | P8010BT | ||
Description | N-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
NIKO-SEM
N-Channel Enhancement Mode
P8010BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
17A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=0.1mH,VDD=50V
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
17
10
35
13
8.5
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS=80V, VGS=0V, TJ=125 °C
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 15A
LIMITS
MIN TYP MAX
UNIT
100
1.3 1.8 2.3
V
±100 nA
1
A
10
63 95 mΩ
61 85 mΩ
REV1.0
1
D-51-3
|
|||
Pages | Pages 4 | ||
Télécharger | [ P8010BT ] |
No | Description détaillée | Fabricant |
P8010BD | N-Channel Field Effect Transistor | NIKO-SEM |
P8010BD | N-Channel Enhancement Mode MOSFET | UNIKC |
P8010BIS | N-Channel Enhancement Mode MOSFET | UNIKC |
P8010BIS | N-Channel Field Effect Transistor | NIKO-SEM |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |