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Numéro de référence | P2610BTF | ||
Description | N-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ
ID
24A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
100
±20
24
15
70
11.7
6.9
37.9
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
3.3
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
100
1.3 1.8 2.3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 ° C
1 A
10
VGS = 4.5V, ID = 10A
VGS =10V, ID = 10A
23.3 35
mΩ
19.3 26.8
REV 1.0
1
D-45-5
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Pages | Pages 4 | ||
Télécharger | [ P2610BTF ] |
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