P0660ETFS Datasheet PDF - NIKO-SEM
| Part Number | P0660ETFS | |
| Description | N-Channel Enhancement Mode Field Effect Transistor | |
| Manufacturers | NIKO-SEM | |
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0660ETF:TO-220F
P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.3Ω
ID
6A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
6
3.8
20
3.5
61.2
32
13
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
3.8
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
600
V
23 4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 600V, VGS = 0V , TC = 25 °C
IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1
A
10
REV 1.0
1
F-12-4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P0660ETFS electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P0660ETFS.PDF Datasheet ] | |
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| P0660ETFS | The function is N-Channel Enhancement Mode Field Effect Transistor. NIKO-SEM | |
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