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PDF P1520ETF Data sheet ( Hoja de datos )
| Número de pieza | P1520ETF | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1520ETF
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
198mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1: GATE
2: DRAIN
3: SOURCE
LIMITS
200
±20
15
9.3
45
16.5
136
32
13
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
62.5
3.8
UNITS
°C/W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
200
VDS = VGS, ID = 250A
1
VDS = 0V, VGS = ±20V
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 ° C
1.8 3
±100
1
10
V
nA
A
REV1.0
1
F-15-3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P1520ETF.PDF ] | |
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