|
|
Datasheet P0660ATF-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P06 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P0602A | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B  Teccor Electronics data | | |
| 2 | P0602AA | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
| 3 | P0602ACMC | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
| 4 | P0602Z | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
| 5 | P0603BD | N-Channel Enhancement Mode MOSFET P0603BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID 70A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dra  UNIKC mosfet | | |
| 6 | P0603BDB | N-Channel Enhancement Mode MOSFET P0603BDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID 72A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Curr UNIKC mosfet | | |
| 7 | P0603BDD | N-Channel Enhancement Mode MOSFET P0603BDD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID 71A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Curr UNIKC mosfet | |
| Esta página es del resultado de búsqueda del P0660ATF-PDF.HTML. Si pulsa el resultado de búsqueda de P0660ATF-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |