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UM6116-4 fiches techniques PDF

UMC - 2K x 8 High Speed CMOS SRAM

Numéro de référence UM6116-4
Description 2K x 8 High Speed CMOS SRAM
Fabricant UMC 
Logo UMC 





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UM6116-4 fiche technique
SUMO
UM6116-2/ UM6116-3/ UM6116-4
2K X 8 High Speed CMOS SRAM
Features
• Single 5V supply and high density 24 pin package
• High speed: Fast access time
70ns/90ns/120ns( max.)
• Low power standby and Standby: 5JlW (typ.)
Low power operation
Operation: 250mW (typ.)
• Completely static RAM: No clock or timing strobe
required
• Directly TTL compatible: All input and output
• Pin compatible with standard 16K EPROM/Mask ROM
• Equal access and cycle time
General Description
The UM6116 is a 16,384-bit static random access memory
organized as 2048 words by 8 bits and operates from a
sign Ie 5 volt supply. It is built with UMC's high perform-
ance CMOS process. Six-transistor full CMOS memory cell
provides low standby current and high-reliability. Inputs
and three-state outputs are TTL compatible and allow for
direct interfacing with common system bus structures. The
UM6116 is moulded in a standard 24-pin 600mil-DIP.
Pin Configuration
Block Diagram
A7
A6
As
A4
A3
A2
Al
Ao
1/01
1/02
1/03
GND
vcc
As
A9
WE
OE
A 10
CS
I/Os
1/07
1/06
1/05
1/04
- - - 0 Vec
MEMORY MATRIX
DECODER •
128 x 128
- - 0 GND
I/Os ()--~--I
COLUMN I/O
INPUT
DATA
CONTROL
COLUMN DECODER
WE 0 - - - - ,
CS
2-33

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