GFB60N03 Datasheet PDF - General Semiconductor
| Part Number | GFB60N03 | |
| Description | N-Channel Enhancement-Mode MOSFET | |
| Manufacturers | General Semiconductor | |
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GFB60N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
TO-263AB
VDS 30V RDS(ON) 11mΩ ID 60A
New Product
G
D
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
30
VGS ±20
ID 60
Pulsed Drain Current
IDM 100
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01
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GFB60N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
1.15
ID = 250µA
1.1
Fig. 11 – Transient Thermal
Impedance
1
1.05
1
0.95
0.9
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
RθJC = 2.0°C/W
800 TC = 25°C
600
400
200
0
0.0001
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
0.1
0.01
0.0001
1. Duty Cycle, D = t1/ t2
2. RθJC(t) = RθJC(norm) *RθJC
3. RθJC = 2.0°C/W
4. TJ -- TC = PDM* RθJC(t)
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
Fig. 13 – Maximum Safe Operating Area
1000
100
10 RDS(ON) Limit
VGS = 10V
Single Pulse
RθJC = 2.0°C/W
TC = 25°C
1
0.1 1
100µs
10ms1ms
100ms
DC
10
VDS -- Drain-Source Voltage (V)
100
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GFB60N03 electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GFB60N03.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| GFB60N03 | The function is N-Channel Enhancement-Mode MOSFET. General Semiconductor | |
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