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RD3L08CGN fiches techniques PDF

ROHM Semiconductor - Power MOSFET ( Transistor )

Numéro de référence RD3L08CGN
Description Power MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RD3L08CGN fiche technique
RD3L08CGN
  Nch 60V 80A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
60V
7.0mΩ
±80A
96W
lFeatures
1) Low on - resistance
2) High power small mold package
3) Pb-free lead plating ; RoHS compliant
4) 100% Rg and UIS tested
5) Halogen free
lOutline
TO-252
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Power tool
Type Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
VGS = 10V
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*1
Tj
Tstg
60
±80
±160
±20
37
52
96
150
-55 to +150
 
Embossed
Tape
2500
TL
RD3L08CGN
Unit
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.002    

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