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ROHM Semiconductor - Power MOSFET ( Transistor )

Numéro de référence R8005ANJ
Description Power MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R8005ANJ fiche technique
R8005ANJ
Nch 800V 5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
800V
2.08W
5A
40W
lOutline
LPT(S)
(SC-83)
(2)
(1)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R8005ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAS*3
PD
Tj
Tstg
dv/dt *5
800
5.0
2.7
20
30
1.66
1.33
2.5
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.10 - Rev.A

PagesPages 14
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