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ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence QH8M22
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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QH8M22 fiche technique
QH8M22
  40V Nch+Pch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
40V -40V
46.0mΩ 190mΩ
±4.5A ±2.0A
1.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TSMT8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
M22
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
total
Junction temperature
Operating junction and storage temperature range
VDSS
ID*3
IDP*1
VGSS
IAS*2
EAS*2
PD*3
PD*4
Tj
Tstg
40 -40
±4.5 ±2.0
±18 ±8.0
±20 ±20
4.5 -2.0
1.6 0.3
1.5
1.1
150
-55 to +150
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/19
20160804 - Rev.002    

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