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PDF 2N7000K Data sheet ( Hoja de datos )
| Número de pieza | 2N7000K | |
| Descripción | N-Channel MOSFET ESD Protected 2000V Transistor | |
| Fabricantes | TAITRON | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N7000K (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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N-Channel MOSFET ESD
Protected 2000V Transistor
2N7000K
N-Channel MOSFET ESD Protected 2000V Transistor
Features
• ESD protected 2000V
• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
• RoHS compliance
TO-92
Mechanical Data
Case:
Terminals:
Weight:
TO-92, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.18 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N7000K
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current
IDP
Continuous
Pulsed (Note 1)
500
2000
PD Drain Power Dissipation
625
TJ Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Note 1: Pulse Width<10µs, Duty Cycle<1%
Unit
V
V
mA
mA
mW
°C
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/AH
Page 1 of 8
1 page  
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Fig.5- Vth - TJ
Fig.6- Is - VSD
Junction Temperature TJ (° C)
Fig.7- C - VDS
Body Diode Forward Voltage VSD (V)
Fig.8- VGS - Qg
Drain Source Voltage VDS (V)
www.taitroncomponents.com
Gate Charge Qg (nC)
Rev. A/AH
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N7000K.PDF ] | |
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