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TC55417P-45 fiches techniques PDF

Toshiba - CMOS STATIC RAM

Numéro de référence TC55417P-45
Description CMOS STATIC RAM
Fabricant Toshiba 
Logo Toshiba 





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TC55417P-45 fiche technique
TOSHIBA MOS MEMORY PRODUCT
16,384 WORD X 4 BIT CMOS STATIC RAM
SILICON GATE CMOS
TC55417 P-35
TC55417 P-45
DESCRIPTION
The TC55417P is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits
using CMOS technology, and operated from a single 5·volt supply. Toshiba's high performance device technology
provides both high speed and low power features with a maximum access time of 35ns/45ns and maximum
operating current of 80mA/60mA at minimum cycle time. The TC55417P also features an automatic stand·by
mode. When deselected by Chip Enable (CE), the operating current is reduced to lOrnA. The TC55417P is
suitable for use in cache memory and high speed storage, where high speed/high density are required. The
TC55417P is molded in a 24 pin standard plastic package with 0.3 inch width for high density assembly. The
TC55417P is fabricated with ion implanted CMOS silicon gate MOS technology for high performance and high
reliability.
IFEATURES/
• Fast access time
TC55417P-35 35ns (Max.)
TC55417P-45 45ns (Max.)
• Lmo1 pmo1er dissipation: Operation TC554l7P-35 SOmA (Max.)
TC55417P-45 60mA (Max.)
Standby
10mA (Max.)
• 5V single power supply
• Fully static operation
• Directly TTL compatible: All Input and Output
• Output buffer concrol
• Package
OE
24 pins standard plastic package, 300 mil width.
IPH! COtlnECT Ior)1
(,8
A7
Af3
A5
A2 7
Al
AD
6E
DE
GND
VI)!)
1\9
IdO
All
A12
A13
N.C.
1/01
J/02
V03
1/04
WE
(300mil DIP)
IpItJ NAflES/
AO "'Al3 Address Inputs
1/01 '" 1/04 Data Input/Output
CE Chip Enable Input
m Write Enable Input
or- Output Enable Input
VDD Pm-1er (+5V)
GND Ground
~---
N.C.
No Connection
ISLOCK DI/\GRAtl/
Ui!:
A6
A7
AS
A9
.A10
All
'12
A13
1.J1
r, '0:-
1/0;5
1-'04-
Cl o---.~
lli:.
BE o-+-+---g
MEMOi1Y
CELL AhhA'I
(256' 64,4)
---0 GNU
- C-75 -

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