DataSheetWiki


TC554161AFTI-70L fiches techniques PDF

Toshiba Semiconductor - STATIC RAM

Numéro de référence TC554161AFTI-70L
Description STATIC RAM
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





TC554161AFTI-70L fiche technique
TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of
10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 mA standby
current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is used to select the device
and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB ,
UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of -40° to 85°C, the TC554161AFTI can be used in environments exhibiting extreme
temperature conditions. The TC554161AFTI is available in a plastic 54-pin thin -small-outline package (TSOP).
FEATURES
· Low-power dissipation
Operating: 55 mW/MHz (typical)
· Single power supply voltage of 5 V ± 10%
· Power down features using CE .
· Data retention supply voltage of 2 to 5.5 V
· Direct TTL compatibility for all inputs and outputs
· Wide operating temperature range of -40° to 85°C
· Standby Current (maximum):
TC554161AFTI
-70,-85,-10 -70L,-85L,-10L
5.5 V
3.0 V
200 mA
100 mA
100 mA
50 mA
· Access Times (maximum):
TC554161AFTI
-70,-70L -85,-85L -10,-10L
Access Time
70 ns 85 ns 100 ns
CE Access Time
70 ns
85 ns 100 ns
OE Access Time
35 ns
45 ns 50 ns
· Package:
TSOP II54-P-400-0.80 (AFTI) (Weight: 0.57 g typ)
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
NC
A3
A2
A1
A0
I/O16
I/O15
VDD
GND
I/O14
I/O13
UB
CE
OP
R/W
I/O12
I/O11
GND
VDD
I/O10
I/O9
NC
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 A4
53 A5
52 A6
51 A7
50 NC
49 I/O1
48 I/O2
47 VDD
46 GND
45 I/O3
44 I/O4
43 LB
42 OE
41 OP
40 NC
39 I/O5
38 I/O6
37 GND
36 VDD
35 I/O7
34 I/O8
33 A8
32 A9
31 A10
30 A11
29 A12
28 NC
(Normal pinout)
A0~A17 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
CE Chip Enable
R/W Read/Write Control
OE Output Enable
LB , UB Data Byte Control
VDD
GND
Power (+5 V)
Ground
NC No Connection
OP* Option
*: OP pin must be open of connected to GND.
2001-08-17 1/10

PagesPages 10
Télécharger [ TC554161AFTI-70L ]


Fiche technique recommandé

No Description détaillée Fabricant
TC554161AFTI-70 STATIC RAM Toshiba Semiconductor
Toshiba Semiconductor
TC554161AFTI-70L STATIC RAM Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche