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TC5562P fiches techniques PDF

Toshiba - CMOS STATIC RAM

Numéro de référence TC5562P
Description CMOS STATIC RAM
Fabricant Toshiba 
Logo Toshiba 





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TC5562P fiche technique
TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 1 BIT CMOS STATIC RAM
SILICON GATE CMOS
TC5562P-45
TC5562P-55
DESCRIPTION
The TC5562P is a 65,536 bit high speed static
random access memory organized as 65,536 words
by 1 bit using CMOS technology, and operated from
a single 5-volt supply.
Toshiba's high performance device technology
provides both high speed and low power features
with a maximum access time of 45ns/55ns and
maximum operating current of 100mA at minimum
cycle time.
The TC5562P also features and automatic stand-
FEATURES·
• Fast access time: TC5562P-45 45ns(MAX.)
TC5562P-55 55ns(MAX.)
• Low power dissipation: Operation 1OOmA(MAX.)
Standby 20mA(MAX.)
• 5V single power supply
PIN CONNECTION (TOP VIEW)
by mode. When deselected by chip Enable(CE), the
operating current is' reduced from 1OOmA to 20mA.
The TC5562P is suitable for use in main memory
of high speed/high density are required.
The TC5562P is moulded in a 22 pin standard
plastic package with 0.3 inch width for high density
assembly.
The TC5562P is fabricated with ion implanted
COMS silicon gate MOS technology for high per-
formance and high reliability.
• Fully Static operation
• Directly TIL compatible: All Input and Output
• I/O separate
• Package: 22 pin standard plastic package,
300mil width
BLOCK DIAGRAM
TC5562P
AO
Al
A2
A3
A4
A5
A6
A7
DOUT
WE
GND
VDD
A15
A14
A13
A12
All
AlO
A9
A8
DIN
CE"
(300mi 1 DIP)
~IN ,NAMES
Ao-A15
DIN
DouT
CE
WE
Voo
GND
Address Inputs
Data Input
Data Output
Chip Enable Input
Write Enable Input
Power (+5V)
Ground
DIN
CE
WE
MEMORY CELL
ARRAY
256 x 256
- - 0 VDD
- - 0 GND
SENSE AMP.
r-,....--v DOUT
~--------------~
- C-63 -

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