DataSheetWiki


TC511002Z-10 fiches techniques PDF

Toshiba - DRAM

Numéro de référence TC511002Z-10
Description DRAM
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





TC511002Z-10 fiche technique
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0
TC511002P/J/Z-12
DESCRIPTION
The TC5ll002P/J/Z is the new generation dynamic RA}! organized 1,048,576 words by 1
bit. The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as
advanced circuit techniques to provide wide operating margins, both internally and to the
system user. Multiplexed address inputs permit the TC5ll002P/J/Z to be packaged in a
standard 18 pin plastic DIP,.26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package
size provides system bit densities and is compatible with ~videly available automated test-
ing and insertion equipment. System oriented features include single power supply of
5V±10% tolerance, direct interfacing capability with high performance logic families such
as Schottky TTL. "Test Mode" function is implemented from Revision C.
FEATURES
• 1,048,576 words by 1 bit organization
• Fast access time and cycle time
TC5ll002P/J/Z-85-l0-l2
tp~c RAS Access Time
85ns lOOns l20ns
tM
Column Address
Access Time
45ns 50ns 60ns
tCAC CS Access Time
25ns 25ns 30ns
tRC Cycle Time
l65ns 190ns 220ns
tsc
Static Column
Mode Cycle Time
50ns 55ns 65ns
• Single power supply of 5V±10% with a built-in
VBB generator
PIN CONNECTION CTOP VIEW)
Plastic DIP Plastic SOJ Plastic ZIP
• Low Power
385mt-l MAX. Operating (TC5ll002P / J /Z-85)
330mt-l MAX. Operating (TC5ll002P / J /Z-lO)
275mt-l HAX. Operating (TC5ll002P / J /Z-12)
5 . 5mW ~1A.,{. Standby
• Output unlatched at cycle end allows
t';vo-dimensional chip sel(':!tion
• Common I/O capability
• Read-Modify-Hrite, CS before p~s refresh,
RAS-only refresh, Hidden refresh, Static
Column Mode and Test ~~de capability.
• All inputs and output TTL compatible
• 512 refresh cycles/8ms
• Package
Plastic DIP: TC5ll002P
Plastic SOJ: TC5ll002J
Plastic-ZIP: TC5ll002Z
Vss
DIN
DOUT WRITE
"C'S' RAS
A9
TF
N.C.
AO A8
A7 AO
A6 A1
A2
A5 A3
A4. VCC
PIN r'IM~ES
AO "'A9
RAS
DIN
DOUT
CS
WRITE
VCC
VSS
TF
N.C.
Address Inputs
Row Address Strobe
Data In
Data Out
Chip Select Input
Read/Write Input
Power (+5V)
Ground
Test Function
No Connection
Vss
DOUT
TI"S'
N.C.
A9
A8
A7
A6
A5
A4.
BLOCK 0IAGRn.r·1
AO
A1
A2
A3
A4-
A5
AS
A7
A8
A9
-A-125-

PagesPages 16
Télécharger [ TC511002Z-10 ]


Fiche technique recommandé

No Description détaillée Fabricant
TC511002Z-10 DRAM Toshiba
Toshiba
TC511002Z-12 DRAM Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche